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This is the same spec used for bipolar transistors. Datasheft of the following breakdown voltages is usually included in the specifications for a FET:. Heat sinks and fans increase the ability of a transistor to dissipate heat. V CB is always equal to or greater than V CE and you can use either of these maximum voltages to compare transistors. Choose a substitute transistor with a breakdown voltage rating at least as high as the original.
One measure of gain, called h FEis often used for comparing transistors. Field-effect transistors come in three basic types: They also have double the input voltage drop since there are two semiconductor junctions in series. Be sure to substitute a FET of the same type as the original. Actual circuit gain depends on other components. P D is the overall power the FET can dissipate through heat. Minimum and maximum values are usually given.
Either the “meat” has extra negative charge carriers electrons and the “bread” has extra positive charge carriers holesor the meat has the positive charges and the bread has the negative charges. Choose a substitute with a rating dqtasheet least as high as the original.
At the maximum voltage, also called a breakdown voltage BVelectrons begin to avalanche in the transistor. Some TO numbers are shown here:. It’s the direct current that flows into the drain terminal when the gate to source voltage is zero. One of the following breakdown voltages is usually included in the specifications datahseet a FET: The original transistor might need special ordering, or be discontinued and unavailable. You can organize the transistors into groups of drawers, each dedicated to a particular transistor outline.
Some TO numbers are shown here: So, altogether, there are six types of field-effect transistors. The transistor outline doesn’t usually tell you which of the three transistor leads connects to its Base terminal Bits Emitter terminal Eor its Collector terminal C.
It’s not a good idea to substitute a Darlington transistor for a non-Darlington type, or vice versa. For a depletion-type FET, the gate-source bias voltage might be 0 V i.
This rating is used primarily with JFETs. Current gain is only occasionally significant when choosing a substitute transistor.
Today, FET acronyms abound but they usually signify only how the FET is constructed or improved upon; they don’t describe another basic type. Maximum Power, called P Dis the overall power a transistor can dissipate, through heat, without burning up. A TO-5 transistor with a P D of 3 watts might be able to dissipate watts with a heat sink.
Data sheets often specify a minimum or typical value of h FEor else a range of values that applies at a certain collector current I C.
Small, TO or TO transistors, depending on their fabrication, can handle between about and mA. Select a substitute with the same general range transisyor values. If the lead arrangement of a small replacement transistor differs from that of the the original, you can sometimes bend the transistor leads across one another to route them transidtor the correct holes in the circuit board.
In an enhancement type device, it’s an off-state current. Be sure to choose a substitute transistor with a maximum current rating transistorr least as high as the original. A junction transistor is a sandwich of “N” and “P” type semiconductors.
You’ll find that fewer devices need to be stocked, and turnaround time can be reduced.
Maximum current is the maximum continuous collector current I C that a transistor can withstand without permanent damage. If you install the wrong polarity, the sandwich won’t work.